Electrical characterization of ZnO single nanowire device for chemical sensor application

E. K. Kim, H. Y. Lee, S. E. Moon, J. Park, S. J. Park, J. H. Kwak, S. Maeng, K. H. Park, J. Kim, S. W. Kim, H. J. Ji, G. T. Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO 2 gas response was reported at the elevated temperature.

Original languageEnglish
Pages (from-to)4698-4701
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number9
Publication statusPublished - 2008 Sept


  • Activation energy
  • Chemical sensor
  • Contact resistance
  • Nanowire device
  • ZnO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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