Electrical characterizations of Neutron-irradiated SiC Schottky diodes

Geunwoo Ko, Hong Yeol Kim, Joona Bang, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalKorean Journal of Chemical Engineering
Issue number1
Publication statusPublished - 2009 Jan

Bibliographical note

Funding Information:
This research was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST). (Grant code: M2AB02) and BK21 program. Also, it was carried out using the MC-50 cyclotron at the Korea Institute of Radiological and Medical sciences (KIRAMS).


  • Diode
  • Neutron irradiation
  • Silicon carbide

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering


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