Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

Youngseok Lim; Young Woo Ok; Sung Ju Tark; Yoon Mook Kang; Donghwan Kim

doi:10.1016/j.cap.2008.08.035

Electrical contact properties of Cu₂S nanowires grown vertically on Cu foil by gas-solid reaction

Youngseok Lim, Young Woo Ok, Sung Ju Tark, Yoon Mook Kang, Donghwan Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We grew Cu₂S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O₂ and H₂S. The electrical contact properties between the Cu₂S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu₂S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu₂O than to Cu/Cu₂S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu₂S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu₂S and the electrical properties were controlled by the Cu/Cu-oxide.

Original language	English
Pages (from-to)	890-893
Number of pages	4
Journal	Current Applied Physics
Volume	9
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2008.08.035
Publication status	Published - 2009 Sept

Bibliographical note

Funding Information:
This work is an outcome of the fostering project of the Best Laboratory Program supported financially by the Korean Ministry of Knowledge Economy (MKE).

Keywords

CuS
Nanowire
Schottky

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2008.08.035

Cite this

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title = "Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction",

abstract = "We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.",

keywords = "CuS, Nanowire, Schottky",

author = "Youngseok Lim and Ok, {Young Woo} and Tark, {Sung Ju} and Kang, {Yoon Mook} and Donghwan Kim",

note = "Funding Information: This work is an outcome of the fostering project of the Best Laboratory Program supported financially by the Korean Ministry of Knowledge Economy (MKE).",

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T1 - Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

AU - Lim, Youngseok

AU - Ok, Young Woo

AU - Tark, Sung Ju

AU - Kang, Yoon Mook

AU - Kim, Donghwan

N1 - Funding Information: This work is an outcome of the fostering project of the Best Laboratory Program supported financially by the Korean Ministry of Knowledge Economy (MKE).

PY - 2009/9

Y1 - 2009/9

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AB - We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of ∼0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide.

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KW - Nanowire

KW - Schottky

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