Electrical contacts to carbon nanotubes down to 1 nm in diameter

Woong Kim; Ali Javey; Ryan Tu; Jien Cao; Qian Wang; Hongjie Dai

doi:10.1063/1.2108127

Electrical contacts to carbon nanotubes down to 1 nm in diameter

Woong Kim, Ali Javey, Ryan Tu, Jien Cao, Qian Wang, Hongjie Dai

Research output: Contribution to journal › Article › peer-review

227 Citations (Scopus)

Abstract

Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

Original language	English
Article number	173101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	17
DOIs	https://doi.org/10.1063/1.2108127
Publication status	Published - 2005 Oct 24
Externally published	Yes

Bibliographical note

Funding Information:
The authors acknowledge insightful discussions with K. J. Cho. This work was supported by MARCO MSD Focus Center.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2108127

Cite this

@article{a5bb6945b84340f2951b25fdf37f9848,

title = "Electrical contacts to carbon nanotubes down to 1 nm in diameter",

abstract = "Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.",

author = "Woong Kim and Ali Javey and Ryan Tu and Jien Cao and Qian Wang and Hongjie Dai",

note = "Funding Information: The authors acknowledge insightful discussions with K. J. Cho. This work was supported by MARCO MSD Focus Center.",

year = "2005",

month = oct,

day = "24",

doi = "10.1063/1.2108127",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Electrical contacts to carbon nanotubes down to 1 nm in diameter

AU - Kim, Woong

AU - Javey, Ali

AU - Tu, Ryan

AU - Cao, Jien

AU - Wang, Qian

AU - Dai, Hongjie

N1 - Funding Information: The authors acknowledge insightful discussions with K. J. Cho. This work was supported by MARCO MSD Focus Center.

PY - 2005/10/24

Y1 - 2005/10/24

N2 - Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

AB - Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S -SWNTs) with d<∼1.6 nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ≤∼1.0 nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.

UR - http://www.scopus.com/inward/record.url?scp=28344446515&partnerID=8YFLogxK

U2 - 10.1063/1.2108127

DO - 10.1063/1.2108127

M3 - Article

AN - SCOPUS:28344446515

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173101

ER -

Electrical contacts to carbon nanotubes down to 1 nm in diameter

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this