Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

Tae Young Lee; Hyun Cheol Koo; Hyung Jun Kim; Suk Hee Han; Joonyeon Chang

doi:10.1109/TMAG.2013.2278175

Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

Tae Young Lee, Hyun Cheol Koo, Hyung Jun Kim, Suk Hee Han, Joonyeon Chang

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.

Original language	English
Article number	2278175
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1109/TMAG.2013.2278175
Publication status	Published - 2014 Jan

Keywords

Quantum well (QW)
Spin Hall effect (SHE)
Spin polarized transport
Spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2013.2278175

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title = "Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer",

abstract = "The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.",

keywords = "Quantum well (QW), Spin Hall effect (SHE), Spin polarized transport, Spintronics",

author = "Lee, {Tae Young} and Koo, {Hyun Cheol} and Kim, {Hyung Jun} and Han, {Suk Hee} and Joonyeon Chang",

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T1 - Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

AU - Lee, Tae Young

AU - Koo, Hyun Cheol

AU - Kim, Hyung Jun

AU - Han, Suk Hee

AU - Chang, Joonyeon

PY - 2014/1

Y1 - 2014/1

N2 - The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.

AB - The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.

KW - Quantum well (QW)

KW - Spin Hall effect (SHE)

KW - Spin polarized transport

KW - Spintronics

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SN - 0018-9464

VL - 50

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 1

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ER -

Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

Abstract

Keywords

ASJC Scopus subject areas

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