Electrical detection of the spin hall effects in InAs quantum well structure with perpendicular magnetization of [Pd/CoFe] multilayer

Tae Young Lee, Hyun Cheol Koo, Hyung Jun Kim, Suk Hee Han, Joonyeon Chang

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 mΩ, is observed and the spin Hall angle is found to be ∼0.01. The dominant mechanism is believed to side-jump scattering.

    Original languageEnglish
    Article number2278175
    JournalIEEE Transactions on Magnetics
    Volume50
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jan

    Keywords

    • Quantum well (QW)
    • Spin Hall effect (SHE)
    • Spin polarized transport
    • Spintronics

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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