Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

A. Y. Polyakov; Han Su Cho; Jin Hyeon Yun; In Hwan Lee; E. B. Yakimov; N. B. Smirnov; K. D. Shcherbachev

doi:10.1149/2.0171606jss

Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

A. Y. Polyakov, Han Su Cho, Jin Hyeon Yun, In Hwan Lee, E. B. Yakimov, N. B. Smirnov, K. D. Shcherbachev

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH₄ )₂ S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

Original language	English
Pages (from-to)	Q165-Q170
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	6
DOIs	https://doi.org/10.1149/2.0171606jss
Publication status	Published - 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Electrochemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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@article{e04689fbe2374b92bd3cb7af81163227,

title = "Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching",

abstract = "GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.",

author = "Polyakov, {A. Y.} and Cho, {Han Su} and Yun, {Jin Hyeon} and Lee, {In Hwan} and Yakimov, {E. B.} and Smirnov, {N. B.} and Shcherbachev, {K. D.}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.",

year = "2016",

doi = "10.1149/2.0171606jss",

language = "English",

volume = "5",

pages = "Q165--Q170",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "6",

}

TY - JOUR

T1 - Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

AU - Polyakov, A. Y.

AU - Cho, Han Su

AU - Yun, Jin Hyeon

AU - Lee, In Hwan

AU - Yakimov, E. B.

AU - Smirnov, N. B.

AU - Shcherbachev, K. D.

PY - 2016

Y1 - 2016

N2 - GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

AB - GaN/InGaN multiple quantum well (MQW) structures with undoped n-GaN cap imitating true light emitting diodes were grown on sapphire and converted to deep nanopillar (NP) structures by dry etching beyond the MQW region. Structural measurements, electrical measurements on Schottky diodes, microcathodoluminescence (MCL) spectra measurements indicate a strong relaxation of strain in NP MQWs manifested in the prominent increase of the bowing radius of the structures and in the blueshift of the MQW peak in MCL spectra. Various treatments of the as-etched NP MQWs (annealing at 700° C, etching in KOH, and soaking in (NH4 )2 S) progressively decreased the leakage current of Schottky diodes and increased the MQW MCL peak intensity due to the suppression of the dry-etching damage of the nanopillar sidewalls.

UR - http://www.scopus.com/inward/record.url?scp=84976579879&partnerID=8YFLogxK

U2 - 10.1149/2.0171606jss

DO - 10.1149/2.0171606jss

M3 - Article

AN - SCOPUS:84976579879

SN - 2162-8769

VL - 5

SP - Q165-Q170

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 6

ER -

Electrical, luminescent and structural properties of nanopillar gan/ingan multi-quantum-well structures prepared by dry etching

Abstract

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ASJC Scopus subject areas

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