Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

Keyphrases

• Accelerating Voltage 33%
• Band Edge 33%
• Capacitance-voltage Profiling 33%
• Charge Carriers 33%
• Cm(III) 33%
• Crystal Quality 33%
• Current Dependence 33%
• Current Imaging 33%
• Deep Level Transient Spectroscopy 33%
• Deep Traps 66%
• Defect Band 33%
• Diffusion Length 66%
• Dislocation Density 33%
• Donor Concentration 66%
• Electrical Compensation 33%
• Electrical Properties 33%
• Electrical-optical Properties 100%
• Electron Beam Induced Current 66%
• Epitaxy Growth 33%
• GaN Films 100%
• Growth Conditions 33%
• Growth Temperature 100%
• High-resolution X-ray Diffraction (HRXRD) 33%
• Hydride Vapor Phase Epitaxy 100%
• Luminescence 33%
• Optical Properties 33%
• Resistive Layer 33%
• Spectrum Measurement 33%
• Structural Properties 100%
• Trap Density 33%
• Undoped 33%
• X-ray Diffraction Measurement 33%

Material Science

• Capacitance 33%
• Charge Carrier 33%
• Deep-Level Transient Spectroscopy 33%
• Density 66%
• Diffraction Measurement 33%
• Film 100%
• High Resolution X-Ray Diffraction 33%
• Hydride 100%
• Luminescence 33%
• Optical Property 33%
• Structural Property 100%
• Vapor Phase Epitaxy 100%

Engineering

• Accelerating Voltage 33%
• Band Edge 33%
• Charge Carrier 33%
• Crystalline Quality 33%
• Deep Level 33%
• Diffusion Length 66%
• Dislocation Density 33%
• Growth Condition 33%
• Growth Temperature 100%
• High Resolution 33%
• Ray Diffraction 33%
• Resistive 33%
• Structural Property 100%
• Transients 33%