Electrical properties and radiation detector performance of free-standing bulk n-GaN

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; V. M. Zaletin; I. M. Gazizov; N. G. Kolin; S. J. Pearton

doi:10.1116/1.3690644

Electrical properties and radiation detector performance of free-standing bulk n-GaN

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, V. M. Zaletin, I. M. Gazizov, N. G. Kolin, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (10¹³-10¹⁴cm^-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼10¹⁶cm^-3 and mobility ∼1000 cm²/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 10¹⁵cm^-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 ¹⁵cm^-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

Original language	English
Article number	021205
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1116/1.3690644
Publication status	Published - 2012 Mar
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the International Science and Technology Center ISTC grant No. 3870. The work at Chonbuk University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (Grant Nos. 2010-0019626, 2010-0026614). A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at CNU. The work at UF was supported in part by DTRA (Don Silversmith).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Lee, I. H., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Zaletin, V. M., Gazizov, I. M., Kolin, N. G., & Pearton, S. J. (2012). Electrical properties and radiation detector performance of free-standing bulk n-GaN. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(2), Article 021205. https://doi.org/10.1116/1.3690644

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title = "Electrical properties and radiation detector performance of free-standing bulk n-GaN",

abstract = "Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Zaletin, {V. M.} and Gazizov, {I. M.} and Kolin, {N. G.} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by the International Science and Technology Center ISTC grant No. 3870. The work at Chonbuk University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (Grant Nos. 2010-0019626, 2010-0026614). A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at CNU. The work at UF was supported in part by DTRA (Don Silversmith).",

year = "2012",

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doi = "10.1116/1.3690644",

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AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Zaletin, V. M.

AU - Gazizov, I. M.

AU - Kolin, N. G.

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by the International Science and Technology Center ISTC grant No. 3870. The work at Chonbuk University was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) (Grant Nos. 2010-0019626, 2010-0026614). A.Y.P. acknowledges support from the Brain Pool Program of Korean Government during his stay at CNU. The work at UF was supported in part by DTRA (Don Silversmith).

PY - 2012/3

Y1 - 2012/3

N2 - Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

AB - Electrical properties and deep electron and hole trap spectra were measured for undoped n-GaN cut from a thick boule grown by hydride vapor phase epitaxy (HVPE). The material is characterized by a very low concentration of residual donors (1013-1014cm-3) in the first 30 m near the growth surface. The bulk electrical properties were similar to those of standard high quality undoped bulk HVPE n-GaN, with a net donor concentration of ∼1016cm-3 and mobility ∼1000 cm2/V s. The strong decrease of electron concentration in the surface region of the high resistivity GaN was caused by the compensation of shallow residual donors by a high density (∼6 1015cm-3) of hole traps with activation energy of 0.2 eV, confined to the compensated region. In addition, other hole traps H5 with activation energy 1.2 eV and concentration 5 10 15cm-3 were present. These latter traps had similar concentrations in both the high resistivity and standard conducting HVPE GaN. Radiation detectors prepared on the high resistivity material showed charge collection efficiency (CCE) close to 100 for spectrometry of -particles with energy up to 5.1 MeV. The CCE dependence on voltage indicated a strong trapping of holes in the active region of detectors by the H5 hole traps.

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Electrical properties and radiation detector performance of free-standing bulk n-GaN

Abstract

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