Electrical properties and structural defects in lattice mismatched InGaAs solar cells

T. Sasaki; K. Arafune; H. S. Lee; N. J. Ekins-Daukes; S. Tanaka; W. Metzger; M. J. Romero; K. Jones; M. Al-Jassim; Y. Ohshita; M. Yamaguchi

doi:10.1109/WCPEC.2006.279576

Electrical properties and structural defects in lattice mismatched InGaAs solar cells

T. Sasaki, K. Arafune, H. S. Lee, N. J. Ekins-Daukes, S. Tanaka, W. Metzger, M. J. Romero, K. Jones, M. Al-Jassim, Y. Ohshita, M. Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Higher conversion efficiency has been predicted theoretically for InGaP/In_0.16Ga_0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In_0.16Ga_0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In_0.16Ga_0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In_0.16Ga_0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	795-798
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279576
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	1

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/WCPEC.2006.279576

Cite this

Sasaki, T., Arafune, K., Lee, H. S., Ekins-Daukes, N. J., Tanaka, S., Metzger, W., Romero, M. J., Jones, K., Al-Jassim, M., Ohshita, Y., & Yamaguchi, M. (2006). Electrical properties and structural defects in lattice mismatched InGaAs solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 795-798). Article 4059749 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279576

Electrical properties and structural defects in lattice mismatched InGaAs solar cells. / Sasaki, T.; Arafune, K.; Lee, H. S. et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 795-798 4059749 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sasaki, T, Arafune, K, Lee, HS, Ekins-Daukes, NJ, Tanaka, S, Metzger, W, Romero, MJ, Jones, K, Al-Jassim, M, Ohshita, Y & Yamaguchi, M 2006, Electrical properties and structural defects in lattice mismatched InGaAs solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059749, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, IEEE Computer Society, pp. 795-798, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279576

Sasaki T, Arafune K, Lee HS, Ekins-Daukes NJ, Tanaka S, Metzger W et al. Electrical properties and structural defects in lattice mismatched InGaAs solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 795-798. 4059749. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279576

Sasaki, T. ; Arafune, K. ; Lee, H. S. et al. / Electrical properties and structural defects in lattice mismatched InGaAs solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 795-798 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "Higher conversion efficiency has been predicted theoretically for InGaP/In0.16Ga0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In0.16Ga0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In0.16Ga0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In0.16Ga0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.",

author = "T. Sasaki and K. Arafune and Lee, {H. S.} and Ekins-Daukes, {N. J.} and S. Tanaka and W. Metzger and Romero, {M. J.} and K. Jones and M. Al-Jassim and Y. Ohshita and M. Yamaguchi",

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AU - Sasaki, T.

AU - Arafune, K.

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AU - Ekins-Daukes, N. J.

AU - Tanaka, S.

AU - Metzger, W.

AU - Romero, M. J.

AU - Jones, K.

AU - Al-Jassim, M.

AU - Ohshita, Y.

AU - Yamaguchi, M.

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AB - Higher conversion efficiency has been predicted theoretically for InGaP/In0.16Ga0.84As/Ge lattice-mismatched triple junction solar cells owing to widening of the effective range of the solar spectrum than the conventional lattice-matched solar cells. The most serious problem in lattice-mismatched system is the large lattice mismatch (∼1%) between In0.16Ga0.84As and Ge cells. The effect of a thermal cycle annealing (TCA) process which is expected to reduce the defect density in this system has been discussed from electrical and structural viewpoints. The minority carrier lifetime in In0.16Ga0.84As emitter layers were improved after TCA treatment from TR-PL measurement. EBIC measurements showed a reduction of the structural defect such as misfit dislocations due to the TCA process in In0.16Ga0.84As base layers. The misfit components observed in the base layers may have some influence through the emitter layers.

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ER -

Electrical properties and structural defects in lattice mismatched InGaAs solar cells

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