Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals

J. H. Won; K. H. Kim; S. H. Cho; J. H. Suh; J. K. Hong; S. U. Kim

doi:10.1016/j.nima.2007.11.074

Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals

J. H. Won, K. H. Kim, S. H. Cho, J. H. Suh, J. K. Hong, S. U. Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 10¹⁹ cm^{- 3}. The resistivity of Pb-doped CdZnTe single crystal was 2 × 10⁹ Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and ²⁴¹Am spectrum measurements.

Original language	English
Pages (from-to)	211-214
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	586
Issue number	2
DOIs	https://doi.org/10.1016/j.nima.2007.11.074
Publication status	Published - 2008 Feb 21

Keywords

CdZnTe:Pb
X-ray detector
X-ray spectrum

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2007.11.074

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title = "Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals",

abstract = "High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.",

keywords = "CdZnTe:Pb, X-ray detector, X-ray spectrum",

author = "Won, {J. H.} and Kim, {K. H.} and Cho, {S. H.} and Suh, {J. H.} and Hong, {J. K.} and Kim, {S. U.}",

note = "Funding Information: This work supported partially by the second Brain Korea 21 Program endorsed by the Korean Ministry of Education.",

year = "2008",

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doi = "10.1016/j.nima.2007.11.074",

language = "English",

volume = "586",

pages = "211--214",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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T1 - Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals

AU - Won, J. H.

AU - Kim, K. H.

AU - Cho, S. H.

AU - Suh, J. H.

AU - Hong, J. K.

AU - Kim, S. U.

N1 - Funding Information: This work supported partially by the second Brain Korea 21 Program endorsed by the Korean Ministry of Education.

PY - 2008/2/21

Y1 - 2008/2/21

N2 - High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.

AB - High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.

KW - CdZnTe:Pb

KW - X-ray detector

KW - X-ray spectrum

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U2 - 10.1016/j.nima.2007.11.074

DO - 10.1016/j.nima.2007.11.074

M3 - Article

AN - SCOPUS:39049130089

SN - 0168-9002

VL - 586

SP - 211

EP - 214

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 2

ER -

Electrical properties and X-ray spectrum of semi-insulating CdZnTe:Pb crystals

Abstract

Keywords

ASJC Scopus subject areas

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