High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 × 1019 cm- 3. The resistivity of Pb-doped CdZnTe single crystal was 2 × 109 Ω cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log (ρ) versus 1000 / T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and 241Am spectrum measurements.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 2008 Feb 21|
- X-ray detector
- X-ray spectrum
ASJC Scopus subject areas
- Nuclear and High Energy Physics