Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

Alexander Y. Polyakov; Nikolai B. Smirnov; Anatoliy V. Govorkov; Alexander V. Markov; Cheul Ro Lee; In Hwan Lee; Nikolai G. Kolin; Denis I. Merkurisov; Vladimir M. Boiko; James S. Wright

doi:10.1557/proc-0955-i15-11

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

Alexander Y. Polyakov, Nikolai B. Smirnov, Anatoliy V. Govorkov, Alexander V. Markov, Cheul Ro Lee, In Hwan Lee, Nikolai G. Kolin, Denis I. Merkurisov, Vladimir M. Boiko, James S. Wright

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Publisher	Materials Research Society
Pages	375-377
Number of pages	3
ISBN (Print)	9781604234114
DOIs	https://doi.org/10.1557/proc-0955-i15-11
Publication status	Published - 2006
Externally published	Yes
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Dec 1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/12/1

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-0955-i15-11

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Lee, C. R., Lee, I. H., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., & Wright, J. S. (2006). Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 375-377). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i15-11

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. / Polyakov, Alexander Y.; Smirnov, Nikolai B.; Govorkov, Anatoliy V. et al.
Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. p. 375-377 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Lee, CR, Lee, IH, Kolin, NG, Merkurisov, DI, Boiko, VM & Wright, JS 2006, Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, Materials Research Society, pp. 375-377, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27. https://doi.org/10.1557/proc-0955-i15-11

Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Lee CR, Lee IH et al. Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. In Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society. 2006. p. 375-377. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-0955-i15-11

Polyakov, Alexander Y. ; Smirnov, Nikolai B. ; Govorkov, Anatoliy V. et al. / Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. pp. 375-377 (Materials Research Society Symposium Proceedings).

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title = "Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation",

abstract = "Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.",

author = "Polyakov, {Alexander Y.} and Smirnov, {Nikolai B.} and Govorkov, {Anatoliy V.} and Markov, {Alexander V.} and Lee, {Cheul Ro} and Lee, {In Hwan} and Kolin, {Nikolai G.} and Merkurisov, {Denis I.} and Boiko, {Vladimir M.} and Wright, {James S.}",

year = "2006",

doi = "10.1557/proc-0955-i15-11",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

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note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

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AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Govorkov, Anatoliy V.

AU - Markov, Alexander V.

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Kolin, Nikolai G.

AU - Merkurisov, Denis I.

AU - Boiko, Vladimir M.

AU - Wright, James S.

PY - 2006

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N2 - Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

AB - Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

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BT - Advances in III-V Nitride Semiconductor Materials and Devices

PB - Materials Research Society

T2 - 2006 MRS Fall Meeting

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ER -

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

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