Electrical properties of amorphous Bi5Nb3 O15 thin film for RF MIM capacitors

Kyung Hoon Cho; Chang Hak Choi; Kyoung Pyo Hong; Joo Young Choi; Young Hun Jeong; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Hwack Joo Lee

doi:10.1109/LED.2008.2000911

Electrical properties of amorphous Bi₅Nb₃ O₁₅ thin film for RF MIM capacitors

Kyung Hoon Cho, Chang Hak Choi, Kyoung Pyo Hong, Joo Young Choi, Young Hun Jeong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Hwack Joo Lee

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Amorphous Bi₅Nb₃O₁₅B₅ N₃ film grown at 300°C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/μ² and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm² at 1 V. The quadratic and linear voltage coefficient of capacitances of the B₅N₃ film were 438 ppm/V² and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/°C at 100 kHz. These results confirmed the potential of the amorphous B₅ N₃ film as a good candidate material for a high-performance metal-insulator-metal capacitors.

Original language	English
Pages (from-to)	684-687
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	7
DOIs	https://doi.org/10.1109/LED.2008.2000911
Publication status	Published - 2008 Jul

Keywords

BiNbO
High-k
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TTC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.2000911

Cite this

@article{0e280922d6c544118eef76a60625bace,

title = "Electrical properties of amorphous Bi5Nb3 O15 thin film for RF MIM capacitors",

abstract = "Amorphous Bi5Nb3O15B5 N3 film grown at 300°C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/μ2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/°C at 100 kHz. These results confirmed the potential of the amorphous B5 N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.",

keywords = "BiNbO, High-k, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TTC), Voltage coefficient of capacitance (VCC)",

author = "Cho, {Kyung Hoon} and Choi, {Chang Hak} and Hong, {Kyoung Pyo} and Choi, {Joo Young} and Jeong, {Young Hun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Lee, {Hwack Joo}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.",

year = "2008",

month = jul,

doi = "10.1109/LED.2008.2000911",

language = "English",

volume = "29",

pages = "684--687",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Electrical properties of amorphous Bi5Nb3 O15 thin film for RF MIM capacitors

AU - Cho, Kyung Hoon

AU - Choi, Chang Hak

AU - Hong, Kyoung Pyo

AU - Choi, Joo Young

AU - Jeong, Young Hun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Lee, Hwack Joo

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

PY - 2008/7

Y1 - 2008/7

N2 - Amorphous Bi5Nb3O15B5 N3 film grown at 300°C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/μ2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/°C at 100 kHz. These results confirmed the potential of the amorphous B5 N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.

AB - Amorphous Bi5Nb3O15B5 N3 film grown at 300°C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/μ2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/°C at 100 kHz. These results confirmed the potential of the amorphous B5 N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.

KW - BiNbO

KW - High-k

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TTC)

KW - Voltage coefficient of capacitance (VCC)

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U2 - 10.1109/LED.2008.2000911

DO - 10.1109/LED.2008.2000911

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VL - 29

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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