Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping

Ju Heon Yoon, Jun Ho Kim, Won Mok Kim, Jong Keuk Park, Young Joon Baik, Tae Yeon Seong, Jeung Hyun Jeong

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


The electrical properties of Cu(In,Ga)Se2/Mo junctions were characterized with respect of MoSe2 orientation and Na doping level using an inverse transmission line method, in which the Cu(In,Ga)Se2 (CIGS)/Mo contact resistance could be measured separately from the CIGS film sheet resistance. The MoSe2 orientation was controlled by varying the Mo surface density, with the c-axis parallel and normal orientations favored on Mo surfaces of lower and higher density, respectively. The effect of Na doping was compared by using samples with and without a SiOx film on sodalime glass. The conversion of the MoSe2 orientation from c-axis normal to parallel produced a twofold reduction in CIGS/Mo contact resistance. Measurements of the contact resistances as a function of temperature showed that the difference in CIGS/Mo contact resistance between the samples with different MoSe2 orientations was due to different barrier heights at the back contact. Comparison between Na-doped and Na-reduced samples revealed that the contact resistance for the Na-reduced system was four times of that of the doped sample, which showed more pronounced Schottky-junction behavior at lower temperature, indicating that Na doping effectively reduced the barrier height at the back contact.

Original languageEnglish
Pages (from-to)90-96
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Issue number1
Publication statusPublished - 2014 Jan


  • CIGS thin-film solar cells
  • CIGS/Mo contact resistance
  • MoSe orientation
  • Na doping
  • inverse transmission line method

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping'. Together they form a unique fingerprint.

Cite this