Abstract
The electrical properties of Cr-SrTiO 3 films deposited on p-Si(1 0 0) substrates are investigated for application to a new type of charge-trap flash memory, named ReCTF (ReRAM + CTF). The Cr-SrTiO 3 film used as a switch in a ReCTF device has a complete cubic perovskite structure with a (2 0 0) crystallographic orientation. By means of current-voltage (I-V) and capacitance-voltage (C-V) analyses, we found that it exhibited electric-field-induced threshold switching characteristics and there were no trapping effects. In this study, we investigated how the retention characteristics of the ReCTF device can be improved without any special processes by applying an optimized Cr-SrTiO 3 film.
| Original language | English |
|---|---|
| Pages (from-to) | 321-324 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 98 |
| DOIs | |
| Publication status | Published - 2012 Oct |
Bibliographical note
Funding Information:This work was supported by the Seoul R&BD program (No. ST100024) as well as the Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) (No. 2010-00218 ). This work was also partially supported by the Samsung Semiconductor Research Center at Korea University .
Keywords
- C-V
- CTF
- I-V
- NVMs
- ReCTF
- ReRAM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering