Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov, Nikolay Smirnov, Sergey Tarelkin, Anatoliy Govorkov, Vitaly Bormashov, Mikhail Kuznetsov, Dmitry Teteruk, Sergey Buga, Nikolay Kornilov, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

Original languageEnglish
Pages (from-to)S159-S164
JournalMaterials Today: Proceedings
Volume3
DOIs
Publication statusPublished - 2016
Externally publishedYes

Bibliographical note

Funding Information:
The work at FSBSU TISNCM was supported by the Ministry of Education and Science of the Russian Federation in the framework of scientific project RFMEFI57414X0074. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (№ К2-2014-055). The work at the Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2013R1A2A2A07067688, 2010-0019626).

Publisher Copyright:
© 2016 Elsevier Ltd.

Keywords

  • Deep trap
  • Diamond film
  • Fermi level pinning
  • Photoconductivity
  • Schottky barrier diode

ASJC Scopus subject areas

  • General Materials Science

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