Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov; Nikolay Smirnov; Sergey Tarelkin; Anatoliy Govorkov; Vitaly Bormashov; Mikhail Kuznetsov; Dmitry Teteruk; Sergey Buga; Nikolay Kornilov; In Hwan Lee

doi:10.1016/j.matpr.2016.02.027

Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Alexander Polyakov, Nikolay Smirnov, Sergey Tarelkin, Anatoliy Govorkov, Vitaly Bormashov, Mikhail Kuznetsov, Dmitry Teteruk, Sergey Buga, Nikolay Kornilov, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-10¹⁴ cm^-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

Original language	English
Pages (from-to)	S159-S164
Journal	Materials Today: Proceedings
Volume	3
DOIs	https://doi.org/10.1016/j.matpr.2016.02.027
Publication status	Published - 2016
Externally published	Yes

Keywords

Deep trap
Diamond film
Fermi level pinning
Photoconductivity
Schottky barrier diode

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.matpr.2016.02.027

Cite this

@article{2cafda8cb70842df88cc6499d498397c,

title = "Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes",

abstract = "Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.",

keywords = "Deep trap, Diamond film, Fermi level pinning, Photoconductivity, Schottky barrier diode",

author = "Alexander Polyakov and Nikolay Smirnov and Sergey Tarelkin and Anatoliy Govorkov and Vitaly Bormashov and Mikhail Kuznetsov and Dmitry Teteruk and Sergey Buga and Nikolay Kornilov and Lee, {In Hwan}",

note = "Funding Information: The work at FSBSU TISNCM was supported by the Ministry of Education and Science of the Russian Federation in the framework of scientific project RFMEFI57414X0074. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (№ К2-2014-055). The work at the Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2013R1A2A2A07067688, 2010-0019626). Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd.",

year = "2016",

doi = "10.1016/j.matpr.2016.02.027",

language = "English",

volume = "3",

pages = "S159--S164",

journal = "Materials Today: Proceedings",

issn = "2214-7853",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

AU - Polyakov, Alexander

AU - Smirnov, Nikolay

AU - Tarelkin, Sergey

AU - Govorkov, Anatoliy

AU - Bormashov, Vitaly

AU - Kuznetsov, Mikhail

AU - Teteruk, Dmitry

AU - Buga, Sergey

AU - Kornilov, Nikolay

AU - Lee, In Hwan

N1 - Funding Information: The work at FSBSU TISNCM was supported by the Ministry of Education and Science of the Russian Federation in the framework of scientific project RFMEFI57414X0074. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (№ К2-2014-055). The work at the Chonbuk National University was supported by National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2013R1A2A2A07067688, 2010-0019626). Publisher Copyright: © 2016 Elsevier Ltd.

PY - 2016

Y1 - 2016

N2 - Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

AB - Electrical and photoelectrical properties of Pt vertical Schottky barrier diodes prepared on thick lightly-doped CVD diamond grown on heavily-doped IIb HPHT substrates were studied. The films were p-type, with the concentration of residual boron acceptors in the mid-1014 cm-3. The Schottky barrier heights determination from photocurrent spectra measurements revealed the presence of two barrier values of 1.45 eV and 2 eV. The former dominated the temperature dependence of the forward current, the latter determined the voltage cut-off in C-V measurements. The results are explained by difference in oxygen termination conditions. The higher barrier is attributed to oxygen-related states at the terminated surface, the lower barrier is associated with native defects.

KW - Deep trap

KW - Diamond film

KW - Fermi level pinning

KW - Photoconductivity

KW - Schottky barrier diode

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U2 - 10.1016/j.matpr.2016.02.027

DO - 10.1016/j.matpr.2016.02.027

M3 - Article

AN - SCOPUS:84963541936

SN - 2214-7853

VL - 3

SP - S159-S164

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

ER -

Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Abstract

Keywords

ASJC Scopus subject areas

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