Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi; Suk Koo Jung; Suk Il Kim; Sung Woo Hwang; Jung Ho Park; Yong Kim; Eun Kyu Kim; Suk Ki Min

doi:10.1143/jjap.37.6996

Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi, Suk Koo Jung, Suk Il Kim, Sung Woo Hwang, Jung Ho Park, Yong Kim, Eun Kyu Kim, Suk Ki Min

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

Original language	English
Pages (from-to)	6996-6997
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.37.6996
Publication status	Published - 1998

Keywords

Carbon
Coulomb staircases
Current-voltage
Electron-beam
Nano-devices
Single electron tunneling

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.6996

Cite this

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abstract = "Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.",

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author = "Choi, {Bum Ho} and Jung, {Suk Koo} and Kim, {Suk Il} and Hwang, {Sung Woo} and Park, {Jung Ho} and Yong Kim and Kim, {Eun Kyu} and Min, {Suk Ki}",

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AU - Choi, Bum Ho

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AU - Hwang, Sung Woo

AU - Park, Jung Ho

AU - Kim, Yong

AU - Kim, Eun Kyu

AU - Min, Suk Ki

PY - 1998

Y1 - 1998

N2 - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

AB - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

KW - Carbon

KW - Coulomb staircases

KW - Current-voltage

KW - Electron-beam

KW - Nano-devices

KW - Single electron tunneling

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IS - 12 B

ER -

Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Abstract

Keywords

ASJC Scopus subject areas

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