Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi, Suk Koo Jung, Suk Il Kim, Sung Woo Hwang, Jung Ho Park, Yong Kim, Eun Kyu Kim, Suk Ki Min

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

    Original languageEnglish
    Pages (from-to)6996-6997
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume37
    Issue number12 B
    DOIs
    Publication statusPublished - 1998

    Keywords

    • Carbon
    • Coulomb staircases
    • Current-voltage
    • Electron-beam
    • Nano-devices
    • Single electron tunneling

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

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