Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi; Suk Koo Jung; Suk Il Kim; Sung Woo Hwang; Jung Ho Park; Yong Kim; Eun Kyu Kim; Suk Ki Min

doi:10.1143/jjap.37.6996

Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Bum Ho Choi
, Suk Koo Jung
, Suk Il Kim
, Sung Woo Hwang^*
, Jung Ho Park
, Yong Kim
, Eun Kyu Kim
, Suk Ki Min

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

Original language	English
Pages (from-to)	6996-6997
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.37.6996
Publication status	Published - 1998

Keywords

Carbon
Coulomb staircases
Current-voltage
Electron-beam
Nano-devices
Single electron tunneling

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.37.6996

Cite this

@article{f12f53fe88ef4db8a124f468e57efafd,

title = "Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices",

abstract = "Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.",

keywords = "Carbon, Coulomb staircases, Current-voltage, Electron-beam, Nano-devices, Single electron tunneling",

author = "Choi, \{Bum Ho\} and Jung, \{Suk Koo\} and Kim, \{Suk Il\} and Hwang, \{Sung Woo\} and Park, \{Jung Ho\} and Yong Kim and Kim, \{Eun Kyu\} and Min, \{Suk Ki\}",

year = "1998",

doi = "10.1143/jjap.37.6996",

language = "English",

volume = "37",

pages = "6996--6997",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 B",

}

TY - JOUR

T1 - Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

AU - Choi, Bum Ho

AU - Jung, Suk Koo

AU - Kim, Suk Il

AU - Hwang, Sung Woo

AU - Park, Jung Ho

AU - Kim, Yong

AU - Kim, Eun Kyu

AU - Min, Suk Ki

PY - 1998

Y1 - 1998

N2 - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

AB - Electrical properties of the electron-beam induced carbon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.

KW - Carbon

KW - Coulomb staircases

KW - Current-voltage

KW - Electron-beam

KW - Nano-devices

KW - Single electron tunneling

UR - https://www.scopus.com/pages/publications/19644391422

U2 - 10.1143/jjap.37.6996

DO - 10.1143/jjap.37.6996

M3 - Article

AN - SCOPUS:19644391422

SN - 0021-4922

VL - 37

SP - 6996

EP - 6997

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12 B

ER -

Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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