Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

J. Kim; B. Luo; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; B. Tolmachevsky; A. V. Osinsky; P. E. Norris

Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Conference article › peer-review

Abstract

Effects of UV/O₃ or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N₂ at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O₃ treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Original language	English
Pages (from-to)	653-658
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002
Externally published	Yes
Event	GaN and Related Alloys-2001 - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 30

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{889050fa82854191b02a5974c75400eb,

title = "Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments",

abstract = "Effects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.",

author = "J. Kim and B. Luo and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and B. Tolmachevsky and Osinsky, {A. V.} and Norris, {P. E.}",

year = "2002",

language = "English",

volume = "693",

pages = "653--658",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys-2001 ; Conference date: 26-11-2001 Through 30-11-2001",

}

TY - JOUR

T1 - Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

AU - Kim, J.

AU - Luo, B.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Tolmachevsky, B.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002

Y1 - 2002

N2 - Effects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

AB - Effects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

UR - http://www.scopus.com/inward/record.url?scp=0036373990&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036373990

SN - 0272-9172

VL - 693

SP - 653

EP - 658

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys-2001

Y2 - 26 November 2001 through 30 November 2001

ER -

Electrical properties of GaN/InGaN MQW heterojunction diodes as affected by various plasma treatments

Abstract

ASJC Scopus subject areas

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