Electrical properties of La 2 O 3 thin films grown on TiN/Si substrates via atomic layer deposition

Nam Kyun Park, Dong Kyun Kang, Byong Ho Kim, Sang Jin Jo, Jeong Sook Ha

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


The electrical as well as the structural properties of La 2 O 3 thin films on TiN substrates were investigated. Amorphous stoichiometric La 2 O 3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD) 3 ] and H 2 O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La 2 O 3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La 2 O 3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10 -10 and 2.1 × 10 -8 A/cm 2 at ±1 V, respectively.

Original languageEnglish
Pages (from-to)8506-8509
Number of pages4
JournalApplied Surface Science
Issue number24
Publication statusPublished - 2006 Oct 15

Bibliographical note

Funding Information:
This work was financially supported by industry-university cooperation project between Hynix semiconductor and Korea University.


  • Atomic layer deposition
  • La O
  • MIM capacitor
  • high-k dielectrics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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