Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes

B. Luo; J. Kim; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; B. Tolmachevsky; A. V. Osinsky; P. E. Norris

Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes

B. Luo, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Article › peer-review

Abstract

Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agreement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔE_c=-0.4 eV and ΔE_v=0.6 eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔE_c=0.2 eV and ΔE_v=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.

Original language	English
Pages (from-to)	659-664
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{0d751bad0f9642bb85a82584d2223133,

title = "Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes",

abstract = "Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agreement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔEc=-0.4 eV and ΔEv=0.6 eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2 eV and ΔEv=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.",

author = "B. Luo and J. Kim and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and B. Tolmachevsky and Osinsky, {A. V.} and Norris, {P. E.}",

year = "2002",

language = "English",

volume = "693",

pages = "659--664",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Tolmachevsky, B.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002

Y1 - 2002

N2 - Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agreement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔEc=-0.4 eV and ΔEv=0.6 eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2 eV and ΔEv=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.

AB - Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agreement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔEc=-0.4 eV and ΔEv=0.6 eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2 eV and ΔEv=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.

UR - http://www.scopus.com/inward/record.url?scp=0036377334&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036377334

SN - 0272-9172

VL - 693

SP - 659

EP - 664

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes

Abstract

ASJC Scopus subject areas

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