Electrical properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunction diodes

B. Luo, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, B. Tolmachevsky, A. V. Osinsky, P. E. Norris

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