Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

Min Suk Oh; Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

doi:10.1007/s10854-006-0030-3

Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

Min Suk Oh, Ja Soon Jang, Seong Ju Park, Tae Yeon Seong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N₂ ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N₂-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.

Original language	English
Pages (from-to)	831-834
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	17
Issue number	10
DOIs	https://doi.org/10.1007/s10854-006-0030-3
Publication status	Published - 2006 Oct

Bibliographical note

Funding Information:
Acknowledgement This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant no. R01-2006-000-10904-0).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN",

abstract = "We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.",

author = "Oh, \{Min Suk\} and Jang, \{Ja Soon\} and Park, \{Seong Ju\} and Seong, \{Tae Yeon\}",

note = "Funding Information: Acknowledgement This work was supported by the basic research program of the Korea Science \& Engineering Foundation (Grant no. R01-2006-000-10904-0).",

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doi = "10.1007/s10854-006-0030-3",

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T1 - Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

AU - Oh, Min Suk

AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

N1 - Funding Information: Acknowledgement This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant no. R01-2006-000-10904-0).

PY - 2006/10

Y1 - 2006/10

N2 - We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.

AB - We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.

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IS - 10

ER -

Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

Abstract

Bibliographical note

ASJC Scopus subject areas

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