Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Hyun Wook Jung, Woo Shik Jung, Hyun Yong Yu, Jin Hong Park

    Research output: Contribution to journalLetterpeer-review

    41 Citations (Scopus)

    Abstract

    Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

    Original languageEnglish
    Pages (from-to)231-233
    Number of pages3
    JournalJournal of Alloys and Compounds
    Volume561
    DOIs
    Publication statusPublished - 2013 Jun 5

    Bibliographical note

    Funding Information:
    This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2011-0007997).

    Keywords

    • Metal induced crystallization
    • Polycrystalline germanium
    • Solid phase crystallization

    ASJC Scopus subject areas

    • Mechanics of Materials
    • Mechanical Engineering
    • Metals and Alloys
    • Materials Chemistry

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