Abstract
Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.
Original language | English |
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Pages (from-to) | 231-233 |
Number of pages | 3 |
Journal | Journal of Alloys and Compounds |
Volume | 561 |
DOIs | |
Publication status | Published - 2013 Jun 5 |
Keywords
- Metal induced crystallization
- Polycrystalline germanium
- Solid phase crystallization
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry