Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Hyun Wook Jung; Woo Shik Jung; Hyun Yong Yu; Jin Hong Park

doi:10.1016/j.jallcom.2013.02.023

Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Hyun Wook Jung, Woo Shik Jung, Hyun Yong Yu, Jin Hong Park

Research output: Contribution to journal › Letter › peer-review

41 Citations (Scopus)

Abstract

Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 ¹⁷ in SPC and ̃10¹⁶ in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm²/V s and ̃30 cm²/V s at 500 °C and 400 °C.

Original language	English
Pages (from-to)	231-233
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	561
DOIs	https://doi.org/10.1016/j.jallcom.2013.02.023
Publication status	Published - 2013 Jun 5

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2011-0007997).

Keywords

Metal induced crystallization
Polycrystalline germanium
Solid phase crystallization

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2013.02.023

Cite this

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title = "Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization",

abstract = "Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of{\~ }10 17 in SPC and{\~ }1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of{\~ }35 cm2/V s and{\~ }30 cm2/V s at 500 °C and 400 °C.",

keywords = "Metal induced crystallization, Polycrystalline germanium, Solid phase crystallization",

author = "Jung, {Hyun Wook} and Jung, {Woo Shik} and Yu, {Hyun Yong} and Park, {Jin Hong}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2011-0007997).",

year = "2013",

month = jun,

day = "5",

doi = "10.1016/j.jallcom.2013.02.023",

language = "English",

volume = "561",

pages = "231--233",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

AU - Jung, Hyun Wook

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Park, Jin Hong

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2011-0007997).

PY - 2013/6/5

Y1 - 2013/6/5

N2 - Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

AB - Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in α-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of ̃10 17 in SPC and ̃1016 in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of ̃35 cm2/V s and ̃30 cm2/V s at 500 °C and 400 °C.

KW - Metal induced crystallization

KW - Polycrystalline germanium

KW - Solid phase crystallization

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U2 - 10.1016/j.jallcom.2013.02.023

DO - 10.1016/j.jallcom.2013.02.023

M3 - Letter

AN - SCOPUS:84874627765

SN - 0925-8388

VL - 561

SP - 231

EP - 233

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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