Electrical properties of PZT-PCW thick film on Pt/Sic/Si, and structural stability of SiC

Ki Yong Choi, Duck Kyun Choi, Ji Yeun Park, Dae Sung Yoon, Tae Song Kim

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We have fabricated the PZT-PCW thick films on Pt/(Ti, Pt, and TiO 2)/SiNx/SiC/Si substrates. SiC thick films were deposited on the Si substrate by thermal CVD method. SiNx films with different film thickness as a diffusion barrier layer were deposited on SiC/Si substrates using plasma enhanced chemical vapor deposition. The bottom electrode used was double layers of Pt/(Ti, Ta, and TiO2). We used TiO2, Ti, und Ta as a buffer layer to improve the adhesion property of Pt film. PZT-PCW thick films were prepared on the SiC thick films by screen printing. All samples were quickly introduced into the furnace, kept at a temperature between 750 and 950° for 10 min, and then cooled in air. For application of cantilever based device, SiC thick film was used as a supporting material in order to improve sensing sensitivity of cantilever based sensor. However, in order to use SiC thick films, we needed to investigate interfacial properties between PZT and SiC thick films. We investigated the structural stability of the adhesion layer (Ti, TiO2, and Ta) and the diffusion barrier layer (SiN x) using the PZT-PCW thick films with different layers. The PZT-PCW thick film with TiO2 as adhesion layer showed more stable interface than that with Ti and Ta below 900°C. In the case of the PZT-PCW thick film with SiNx layer, SiNx films showed more stable interface at the thickness of 3000 to 6000 Å. In the case of PZT-PCW thick film with the SiNx thickness of 6000 Å, the electrical properties were improved with the increase of sintering temperature. In case of the PZT-PCW thick film with sintered at 950°C, the remanent polarization (Pr) was about 13.0 μC/cm2 at the applied field of 150 kV/cm, and the dielectric permittivity (εr) was 551 at the frequency of 100 kHz.

Original languageEnglish
Pages (from-to)93-101
Number of pages9
JournalIntegrated Ferroelectrics
Publication statusPublished - 2005
Externally publishedYes
Event16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of
Duration: 2004 Apr 52004 Apr 8

Bibliographical note

Funding Information:
This research, under the contract project code MS-04-133-01, has been supported by the Intelligent Microsystem Center(IMC; http://www.microsystem. re.kr), which carries out one of the 21st century’s Frontier R&D Projects sponsored by the Korea Ministry of Science & Technology.

Copyright 2008 Elsevier B.V., All rights reserved.


  • MEMS
  • PZT
  • Piezoelectric
  • SiC
  • Thick film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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