Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13×1017 cm-3) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 °C for 1 min in a N2 ambient improves the I-V characteristics of the as-deposited contact. The 600 °C contact produces a specific contact resistance of 1.4×10-3 Ωcm2. However, annealing at 800 °C results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 °C is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 °C for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour.
Bibliographical noteFunding Information:
This work was supported by grant no. (R01-2002-000-00356-0) from the Basic Research Program of the Korea Science & Engineering Foundation (KOSEF).
- Electrical properties
- Glancing angle X-ray diffraction
- Ohmic contacts
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering