Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

A. Y. Polyakov; Dae Woo Jeon; In Hwan Lee; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; E. B. Yakimov

doi:10.1063/1.4793630

Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

A. Y. Polyakov, Dae Woo Jeon, In Hwan Lee, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼10⁸ cm^-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near E_v + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 10¹⁴ cm^-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

Original language	English
Article number	083712
Journal	Journal of Applied Physics
Volume	113
Issue number	8
DOIs	https://doi.org/10.1063/1.4793630
Publication status	Published - 2013 Feb 28
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR Grants Nos. 10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the IT R&D program of MKE/KEIT (10040379, Development of 5 W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances).

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth",

abstract = "Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.",

author = "Polyakov, {A. Y.} and Jeon, {Dae Woo} and Lee, {In Hwan} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Yakimov, {E. B.}",

note = "Funding Information: The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR Grants Nos. 10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the IT R&D program of MKE/KEIT (10040379, Development of 5 W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances). ",

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doi = "10.1063/1.4793630",

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AU - Polyakov, A. Y.

AU - Jeon, Dae Woo

AU - Lee, In Hwan

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Yakimov, E. B.

N1 - Funding Information: The work at IRM was supported in part by the Russian Foundation for Basic Research RFBR Grants Nos. 10-02-00566-a and 11-02-00718-a. The work at Chonbuk National University was supported by the IT R&D program of MKE/KEIT (10040379, Development of 5 W Full Color (R, G, B) Laser Diode & Module for Convergence Appliances).

PY - 2013/2/28

Y1 - 2013/2/28

N2 - Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

AB - Electrical properties, deep traps spectra, microcathodoluminescence (MCL) spectra measurements, MCL imaging, and electron beam induced current (EBIC) imaging were performed for undoped GaN films grown by metalorganic chemical vapor deposition using maskless epitaxial lateral overgrowth on basal plane sapphire. The films showed a low dislocation density of ∼108 cm-2 in the laterally overgrown wings and an order of magnitude higher dislocation density in vertical growth seed regions, as determined by MCL and EBIC imaging. The polarity of EBIC signal measurements and the room temperature capacitance-voltage characteristics suggested that the high-dislocation-density seed regions were high-resistivity p-type, with the Fermi level pinned near Ev + 0.4 eV, as determined by admittance spectroscopy. The wing regions were n-type, with low residual donor concentration of some 1014 cm-3 near the surface. The donor concentration further decreased upon movement towards the sapphire substrate. Some possible explanations of the observed effects are discussed.

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

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