Electrical properties of V₂O₅ (vanadium pentoxide) nanowires

We fabricated a metal-insulator-semiconductor (MIS) structure with V ₂O₅ nanowires on p-type Si substrates that have been pretreated with 3-aminopropyltriethoxysilane (3-APS) for better adsorption of the nanowires by using a quenching method. The V₂O₅ nanowires synthesized by using the gel/sol method showed semiconductor properties. For the MIS structure, 50 nm of poly-methylmethcrylate (PMMA) was spin coated on the V₂O₅ nanowires; then, a Au gate was deposited. The electrical properties of this structure were characterized by using a capacitance-voltage (C-V) measurements. The typical C-V hysteresis appeared at room temperature in the samples treated using a piranah solution for 30 s and 45 s then, the voltage gaps Were measured to be about 5 V and 7.5 V, respectively. These electrical properties show the feasibility of using V ₂O₅ nanowires for a memory device.