We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.
Bibliographical noteFunding Information:
This work was supported by the Proton Accelerator User, the National Research Laboratory (NRL) Program, the National Core Research Center (NCRC) grant, and the World Class University (WCU) program by the Korean Ministry of Education, Science and Technology (MEST) and the Program of Integrated Molecular Systems at GIST.
ASJC Scopus subject areas
- Physics and Astronomy(all)