Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness

Minhyeok Choe; Gunho Jo; Jongsun Maeng; Woong Ki Hong; Minseok Jo; Gunuk Wang; Woojin Park; Byoung Hun Lee; Hyunsang Hwang; Takhee Lee

doi:10.1063/1.3298910

Electrical properties of ZnO nanowire field effect transistors with varying high- k Al₂O₃ dielectric thickness

Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, Takhee Lee

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al₂O₃ dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al₂O₃ dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al₂O₃ dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al₂O₃ dielectric layer thickness.

Original language	English
Article number	034504
Journal	Journal of Applied Physics
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.3298910
Publication status	Published - 2010
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Proton Accelerator User, the National Research Laboratory (NRL) Program, the National Core Research Center (NCRC) grant, and the World Class University (WCU) program by the Korean Ministry of Education, Science and Technology (MEST) and the Program of Integrated Molecular Systems at GIST.

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3298910

Cite this

@article{c1a3c2ac724f49d1a87aa06cc8d72002,

title = "Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness",

abstract = "We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.",

author = "Minhyeok Choe and Gunho Jo and Jongsun Maeng and Hong, {Woong Ki} and Minseok Jo and Gunuk Wang and Woojin Park and Lee, {Byoung Hun} and Hyunsang Hwang and Takhee Lee",

note = "Funding Information: This work was supported by the Proton Accelerator User, the National Research Laboratory (NRL) Program, the National Core Research Center (NCRC) grant, and the World Class University (WCU) program by the Korean Ministry of Education, Science and Technology (MEST) and the Program of Integrated Molecular Systems at GIST.",

year = "2010",

doi = "10.1063/1.3298910",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness

AU - Choe, Minhyeok

AU - Jo, Gunho

AU - Maeng, Jongsun

AU - Hong, Woong Ki

AU - Jo, Minseok

AU - Wang, Gunuk

AU - Park, Woojin

AU - Lee, Byoung Hun

AU - Hwang, Hyunsang

AU - Lee, Takhee

N1 - Funding Information: This work was supported by the Proton Accelerator User, the National Research Laboratory (NRL) Program, the National Core Research Center (NCRC) grant, and the World Class University (WCU) program by the Korean Ministry of Education, Science and Technology (MEST) and the Program of Integrated Molecular Systems at GIST.

PY - 2010

Y1 - 2010

N2 - We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

AB - We investigated the electronic properties of ZnO nanowire combined with the scaled high- k Al2O3 dielectrics using metal-oxide-semiconductor and field effect transistor (FET) device structures. We found that Al2O3 dielectric material can significantly reduce leakage currents when the applied voltage was restricted less than the transition voltage of direct tunneling to Fowler-Nordheim tunneling. The ZnO nanowire FETs with Al2O3 dielectrics exhibited the increase in electrical conductance, transconductance, and mobility and the threshold voltage shifted to the negative gate bias direction with decreasing Al2O3 dielectric layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=76949108494&partnerID=8YFLogxK

U2 - 10.1063/1.3298910

DO - 10.1063/1.3298910

M3 - Article

AN - SCOPUS:76949108494

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034504

ER -