Electrical properties of ZnO nanowire field effect transistors with varying high- k Al2O3 dielectric thickness
- Minhyeok Choe*
- , Gunho Jo
- , Jongsun Maeng
- , Woong Ki Hong
- , Minseok Jo
- , Gunuk Wang
- , Woojin Park
- , Byoung Hun Lee
- , Hyunsang Hwang
- , Takhee Lee
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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