Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O 1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

Jin Seong Kim; Jae Min Han; Mi Ri Joung; Sang Hyo Kweon; Chong Yun Kang; Sahn Nahm

doi:10.1016/j.ceramint.2014.06.093

Electrical properties of (Zr,Ti)_0.85(Ca,Sr)_0.15O _1.85 thin film grown on Pt/Ti/SiO₂/Si substrate using RF magnetron sputtering

Jin Seong Kim, Jae Min Han, Mi Ri Joung, Sang Hyo Kweon, Chong Yun Kang, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Crystalline (Zr,Ti)_0.85(Ca,Sr)_0.15O_1.85 (ZTCS) films were grown on a Pt/Ti/SiO₂/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 °C was approximately 30.5 with a low tan δ value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm² with a small TCC of -60.7 ppm/°C at 100 kHz. A low leakage current (1.4×10^-8 A/cm² at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures (≤300 °C) are good candidates for use as embedded capacitor in printed circuit boards.

Original language	English
Pages (from-to)	14957-14964
Number of pages	8
Journal	Ceramics International
Volume	40
Issue number	9 PART B
DOIs	https://doi.org/10.1016/j.ceramint.2014.06.093
Publication status	Published - 2014

Bibliographical note

Funding Information:
This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge and Economy, Republic of Korea (Grant no. 10039992 ).

Keywords

Dielectric
Embedded capacitor
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2014.06.093

Cite this

@article{66515b9c7ff4402c920f9451e6601921,

title = "Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O 1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering",

abstract = "Crystalline (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films were grown on a Pt/Ti/SiO2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 °C was approximately 30.5 with a low tan δ value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm2 with a small TCC of -60.7 ppm/°C at 100 kHz. A low leakage current (1.4×10-8 A/cm2 at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures (≤300 °C) are good candidates for use as embedded capacitor in printed circuit boards.",

keywords = "Dielectric, Embedded capacitor, Thin film",

author = "Kim, {Jin Seong} and Han, {Jae Min} and Joung, {Mi Ri} and Kweon, {Sang Hyo} and Kang, {Chong Yun} and Sahn Nahm",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge and Economy, Republic of Korea (Grant no. 10039992 ).",

year = "2014",

doi = "10.1016/j.ceramint.2014.06.093",

language = "English",

volume = "40",

pages = "14957--14964",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "9 PART B",

}

TY - JOUR

T1 - Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O 1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

AU - Kim, Jin Seong

AU - Han, Jae Min

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kang, Chong Yun

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge and Economy, Republic of Korea (Grant no. 10039992 ).

PY - 2014

Y1 - 2014

N2 - Crystalline (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films were grown on a Pt/Ti/SiO2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 °C was approximately 30.5 with a low tan δ value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm2 with a small TCC of -60.7 ppm/°C at 100 kHz. A low leakage current (1.4×10-8 A/cm2 at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures (≤300 °C) are good candidates for use as embedded capacitor in printed circuit boards.

AB - Crystalline (Zr,Ti)0.85(Ca,Sr)0.15O1.85 (ZTCS) films were grown on a Pt/Ti/SiO2/Si substrate at various temperatures by using rf-magnetron sputtering. The ZTCS films had a cubic stabilized zirconia structure. The dielectric constant (k) of the ZTCS film grown at 300 °C was approximately 30.5 with a low tan δ value of 0.007 at 100 kHz. Further, this film exhibited a similar k value of 30.4 and a high quality factor of 225 at 1.0 GHz. Moreover, it showed a high capacitance density of 290 nF/cm2 with a small TCC of -60.7 ppm/°C at 100 kHz. A low leakage current (1.4×10-8 A/cm2 at 1.5 MV/cm) with a high breakdown electric field (1.85 MV/cm) was also observed in this film; the leakage current of this film was explained by Schottky emission. Therefore, it can be concluded that ZTCS films grown at low temperatures (≤300 °C) are good candidates for use as embedded capacitor in printed circuit boards.

KW - Dielectric

KW - Embedded capacitor

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=84906101325&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2014.06.093

DO - 10.1016/j.ceramint.2014.06.093

M3 - Article

AN - SCOPUS:84906101325

SN - 0272-8842

VL - 40

SP - 14957

EP - 14964

JO - Ceramics International

JF - Ceramics International

IS - 9 PART B

ER -