Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires

Jun Hwan Moon; Seunghyun Kim; Taesoon Kim; Yoo Sang Jeon; Yanghee Kim; Jae Pyoung Ahn; Young Keun Kim

doi:10.1016/j.jmst.2021.06.073

Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires

Jun Hwan Moon, Seunghyun Kim, Taesoon Kim, Yoo Sang Jeon, Yanghee Kim, Jae Pyoung Ahn, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of Ru_xCo_1-_x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.

Original language	English
Pages (from-to)	17-25
Number of pages	9
Journal	Journal of Materials Science and Technology
Volume	105
DOIs	https://doi.org/10.1016/j.jmst.2021.06.073
Publication status	Published - 2022 Apr 10

Bibliographical note

Funding Information:
This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co., Ltd. (No. IO210317–08500–01).

Funding Information:
This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co. Ltd. (No. IO210317–08500–01).

Publisher Copyright:
© 2021

Keywords

Electrical resistivity
Electrodeposition
Microstructure
Nanowire
Ruthenium (Ru)
Ruthenium-cobalt (Ru-Co)

ASJC Scopus subject areas

Ceramics and Composites
Mechanics of Materials
Mechanical Engineering
Polymers and Plastics
Metals and Alloys
Materials Chemistry

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10.1016/j.jmst.2021.06.073

Cite this

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title = "Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires",

abstract = "Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of RuxCo1-x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.",

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note = "Funding Information: This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co., Ltd. (No. IO210317–08500–01). Funding Information: This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co. Ltd. (No. IO210317–08500–01). Publisher Copyright: {\textcopyright} 2021",

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AU - Kim, Taesoon

AU - Jeon, Yoo Sang

AU - Kim, Yanghee

AU - Ahn, Jae Pyoung

AU - Kim, Young Keun

N1 - Funding Information: This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co., Ltd. (No. IO210317–08500–01). Funding Information: This work was financially supported by the Samsung Research Funding & Incubation Center of Samsung Electronics (No. SRFC-TA1703–06) and Samsung Electronics Co. Ltd. (No. IO210317–08500–01). Publisher Copyright: © 2021

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N2 - Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of RuxCo1-x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.

AB - Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of RuxCo1-x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.

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KW - Microstructure

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KW - Ruthenium-cobalt (Ru-Co)

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Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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