Electrical resistivity evolution in electrodeposited Ru and Ru-Co nanowires

Jun Hwan Moon, Seunghyun Kim, Taesoon Kim, Yoo Sang Jeon, Yanghee Kim, Jae Pyoung Ahn, Young Keun Kim

Research output: Contribution to journalArticlepeer-review


Nanoscale ruthenium (Ru)-based materials are promising replacements for existing multilayered Cu interconnects in integrated circuits. However, it is not easy to apply the results of previously reported studies directly to the electrochemical damascene process because the previous studies have mainly focused on thin films by dry deposition. Here, we report the electrical resistivity and microstructure of electrodeposited Ru nanowires. We estimate that the resistivity value of a 10 nm diameter Ru nanowire to be 71.6 μΩ cm after analyzing the resistivity values of individual nanowires with various diameters. Furthermore, we investigate the electrical properties of RuxCo1-x nanowires where x is 0.04–0.99 at.% as possible replacements of the current TaN barrier structures. Over the entire composition range, the resistivity values of alloys are much lower than that of the conventional TaN. Additionally, Ru and Ru-alloy nanowires surrounded by dielectric silica are thermally stable after 450 °C heat treatment. Therefore, the nanoscale Ru and Ru-Co alloys possessing low resistivity values can be candidates for the interconnect and barrier materials, respectively.

Original languageEnglish
Pages (from-to)17-25
Number of pages9
JournalJournal of Materials Science and Technology
Publication statusPublished - 2022 Apr 10


  • Electrical resistivity
  • Electrodeposition
  • Microstructure
  • Nanowire
  • Ruthenium (Ru)
  • Ruthenium-cobalt (Ru-Co)

ASJC Scopus subject areas

  • Ceramics and Composites
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics
  • Metals and Alloys
  • Materials Chemistry


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