Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo; Hyunjung Yi; Jae Beom Ko; Joonyeon Chang; Suk Hee Han; Donghwa Jung; Seon Gu Huh; Jonghwa Eom

doi:10.1063/1.2430688

Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo, Hyunjung Yi, Jae Beom Ko, Joonyeon Chang, Suk Hee Han, Donghwa Jung, Seon Gu Huh, Jonghwa Eom

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95 Citations (Scopus)

Abstract

The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

Original language	English
Article number	022101
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2430688
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the KIST Vision 21 Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrical spin injection and detection in an InAs quantum well",

abstract = "The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.",

author = "Koo, {Hyun Cheol} and Hyunjung Yi and Ko, {Jae Beom} and Joonyeon Chang and Han, {Suk Hee} and Donghwa Jung and Huh, {Seon Gu} and Jonghwa Eom",

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T1 - Electrical spin injection and detection in an InAs quantum well

AU - Koo, Hyun Cheol

AU - Yi, Hyunjung

AU - Ko, Jae Beom

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Jung, Donghwa

AU - Huh, Seon Gu

AU - Eom, Jonghwa

N1 - Funding Information: This work was supported by the KIST Vision 21 Program.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

AB - The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

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DO - 10.1063/1.2430688

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JO - Applied Physics Letters

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Electrical spin injection and detection in an InAs quantum well

Abstract

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