Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo; Hyunjung Yi; Jae Beom Ko; Joonyeon Chang; Suk Hee Han; Donghwa Jung; Seon Gu Huh; Jonghwa Eom

doi:10.1063/1.2430688

Electrical spin injection and detection in an InAs quantum well

Hyun Cheol Koo^*
, Hyunjung Yi
, Jae Beom Ko
, Joonyeon Chang
, Suk Hee Han
, Donghwa Jung
, Seon Gu Huh
, Jonghwa Eom

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

Original language	English
Article number	022101
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2430688
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the KIST Vision 21 Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2430688

Cite this

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title = "Electrical spin injection and detection in an InAs quantum well",

abstract = "The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9\% at 20 K and remains at 1.4\% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.",

author = "Koo, \{Hyun Cheol\} and Hyunjung Yi and Ko, \{Jae Beom\} and Joonyeon Chang and Han, \{Suk Hee\} and Donghwa Jung and Huh, \{Seon Gu\} and Jonghwa Eom",

note = "Funding Information: This work was supported by the KIST Vision 21 Program.",

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doi = "10.1063/1.2430688",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Electrical spin injection and detection in an InAs quantum well

AU - Koo, Hyun Cheol

AU - Yi, Hyunjung

AU - Ko, Jae Beom

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Jung, Donghwa

AU - Huh, Seon Gu

AU - Eom, Jonghwa

N1 - Funding Information: This work was supported by the KIST Vision 21 Program.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

AB - The authors demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin-polarized current is injected from a Ni81 Fe19 thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multilayers. Injected spins accumulate and diffuse out in the 2DEG, and the spins are electrically detected by a neighboring Ni81 Fe19 electrode. The observed spin diffusion length is 1.8 μm at 20 K. The injected spin polarization across the Ni81 Fe19 InAs interface is 1.9% at 20 K and remains at 1.4% even at room temperature. Their experimental results will contribute significantly to the realization of a practical spin field effect transistor.

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U2 - 10.1063/1.2430688

DO - 10.1063/1.2430688

M3 - Article

AN - SCOPUS:33846243784

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022101

ER -

Electrical spin injection and detection in an InAs quantum well

Abstract

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