Abstract
In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of ∼ 10-4 A, and a threshold voltage (VTH) of -0.76 V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the VTH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The VTH was recovered to over 83% at a recovery bias voltage of ±5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.
| Original language | English |
|---|---|
| Article number | 9523874 |
| Pages (from-to) | 119402-119405 |
| Number of pages | 4 |
| Journal | IEEE Access |
| Volume | 9 |
| DOIs | |
| Publication status | Published - 2021 |
Bibliographical note
Funding Information:This work was supported by the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT and Future Planning, and in part by Korea University and Samsung Electronics Company Ltd., under Grant IO201223-08257-01.
Publisher Copyright:
© 2013 IEEE.
Keywords
- bias stress
- Field-effect transistor
- positive feedback loop
- recovery
- reliability
ASJC Scopus subject areas
- General Computer Science
- General Materials Science
- General Engineering