Abstract
In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of ∼ 10-4 A, and a threshold voltage (VTH) of -0.76 V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the VTH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The VTH was recovered to over 83% at a recovery bias voltage of ±5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.
Original language | English |
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Article number | 9523874 |
Pages (from-to) | 119402-119405 |
Number of pages | 4 |
Journal | IEEE Access |
Volume | 9 |
DOIs | |
Publication status | Published - 2021 |
Keywords
- bias stress
- Field-effect transistor
- positive feedback loop
- recovery
- reliability
ASJC Scopus subject areas
- Computer Science(all)
- Materials Science(all)
- Engineering(all)