Abstract
The LiMn2O4 and LiSn0.0125Mn 1.975O4 thin films were grown on Pt/Ti/SiO2/Si (100) substrate by RF magnetron sputtering. To obtain the structural stability and good cycle performance, deposition parameters, namely working pressure, sputtering gas ratio of Ar and O2, post-annealing temperature were established. The structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The electrochemical properties were estimated by two electrode half-cell test with WBCS 3000 (Wonatech, Korea) at constant current rate of 1 C-rate. The Sn substituted LiMn2O4 thin film deposited at 10 mtorr with mixture of argon and oxygen (Ar/O2 = 3/1) and then annealed at 500 °C in O2 atmosphere showed good cycle performance. The Sn substituted LiMn2O4 thin films showed larger capacity of ~30 μAh/μm-cm2 and higher cyclability than LiMn2O4 thin films.
Original language | English |
---|---|
Pages (from-to) | 3288-3292 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2013 May |
Keywords
- Capacity
- Cyclability
- LiMnO
- RF magnetron sputtering
- Thin film battery
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics