Electrochemically metal-doped reduced graphene oxide films: Properties and applications

Myung Sic Chae; Tae Ho Lee; Kyung Rock Son; Tae Hoon Park; Kyo Seon Hwang; Tae Geun Kim

doi:10.1016/j.jmst.2019.09.014

Electrochemically metal-doped reduced graphene oxide films: Properties and applications

Myung Sic Chae, Tae Ho Lee, Kyung Rock Son, Tae Hoon Park, Kyo Seon Hwang, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm² V⁻¹ s⁻¹ compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.

Original language	English
Pages (from-to)	72-80
Number of pages	9
Journal	Journal of Materials Science and Technology
Volume	40
DOIs	https://doi.org/10.1016/j.jmst.2019.09.014
Publication status	Published - 2020 Mar 1

Bibliographical note

Funding Information:
This work was supported financially by the National Research Foundation of Korea (NRF) (No. 2016R1A3B1908249 ). M.S. Chae and T.H. Lee fabricated the device and conducted measurements. K.R. Son and T.H. Park conducted the AFM measurements. T.H. Lee, M.S. Chae, K.S. Hwang and T.G. Kim wrote the manuscript. All authors have given approval to the final version of the manuscript. The authors would like to thank Editage ( www.editage.co.kr ) for English language editing. Appendix A

Publisher Copyright:
© 2019

Keywords

Electrical breakdown process
Electrochemical doping treatment
Field-effect transistor
Reduced graphene oxide

ASJC Scopus subject areas

Ceramics and Composites
Mechanics of Materials
Mechanical Engineering
Polymers and Plastics
Metals and Alloys
Materials Chemistry

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10.1016/j.jmst.2019.09.014

Cite this

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title = "Electrochemically metal-doped reduced graphene oxide films: Properties and applications",

abstract = "The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm2 V−1 s−1 compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.",

keywords = "Electrical breakdown process, Electrochemical doping treatment, Field-effect transistor, Reduced graphene oxide",

author = "Chae, {Myung Sic} and Lee, {Tae Ho} and Son, {Kyung Rock} and Park, {Tae Hoon} and Hwang, {Kyo Seon} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported financially by the National Research Foundation of Korea (NRF) (No. 2016R1A3B1908249 ). M.S. Chae and T.H. Lee fabricated the device and conducted measurements. K.R. Son and T.H. Park conducted the AFM measurements. T.H. Lee, M.S. Chae, K.S. Hwang and T.G. Kim wrote the manuscript. All authors have given approval to the final version of the manuscript. The authors would like to thank Editage ( www.editage.co.kr ) for English language editing. Appendix A Publisher Copyright: {\textcopyright} 2019",

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AU - Lee, Tae Ho

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AU - Park, Tae Hoon

AU - Hwang, Kyo Seon

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported financially by the National Research Foundation of Korea (NRF) (No. 2016R1A3B1908249 ). M.S. Chae and T.H. Lee fabricated the device and conducted measurements. K.R. Son and T.H. Park conducted the AFM measurements. T.H. Lee, M.S. Chae, K.S. Hwang and T.G. Kim wrote the manuscript. All authors have given approval to the final version of the manuscript. The authors would like to thank Editage ( www.editage.co.kr ) for English language editing. Appendix A Publisher Copyright: © 2019

PY - 2020/3/1

Y1 - 2020/3/1

N2 - The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm2 V−1 s−1 compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.

AB - The fine control of doping levels in graphene materials such as reduced graphene oxide (RGO) is important to properly manipulate their ambipolar transport characteristics for various device applications. However, conventional doping methods involve complex chemical reactions, large-scale doping processes, and poor stability. Herein, a simple and controllable electrochemical doping treatment (EDT), performed via the conductive channels created at the RGO surface by the application of an electric field, is introduced to tailor the electrical properties of RGO films. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are performed to detect the presence of Ni atoms in RGO films after the EDT (EDT-RGO). Then, EDT-RGO field-effect transistors (FETs) are fabricated with different doping areas (0 to 100 % fractional area) on the RGO active channel to investigate the effect and selective-area doping capability of the EDT. Owing to p-type doping compensation by the intercalated Ni atoms, the electron mobility of the EDT-RGO FET decreases from 1.40 to 0.12 cm2 V−1 s−1 compared with that of the undoped RGO-FET, leading to the conversion from ambipolar to unipolar p-type transfer characteristics.

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ER -

Electrochemically metal-doped reduced graphene oxide films: Properties and applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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