Electrodeposition of Cu(In,Ga)Se2 crystals on high-density CdS nanowire arrays for photovoltaic applications

Woo Chul Kwak; Sung Hwan Han; Tae Geun Kim; Yun Mo Sung

doi:10.1021/cg101157a

Electrodeposition of Cu(In,Ga)Se₂ crystals on high-density CdS nanowire arrays for photovoltaic applications

Woo Chul Kwak, Sung Hwan Han, Tae Geun Kim, Yun Mo Sung

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

High-density and single-crystalline CdS nanowires were grown on fluorine-doped tin oxide (FTO)/soda-lime glass substrates using Bi catalysts via the so-called solution-liquid-solid (SLS) mechanism. Through a series of voltage loading steps, high-quality Cu(In,Ga)Se₂ (CIGS) light absorption layers were electrochemically deposited on the CdS window layers and subsequently selenized at 400 °C to form photovoltaic cells. Due to the one dimensionality and single crystallinity of the CdS nanowires, the carrier collection efficiency could be improved. The resulting CIGS/CdS nanowire solar cells showed a light energy conversion efficiency of ̃6.18% under AM 1.5 conditions (I = 100 mW/cm²), which is ̃28.7% higher than that of the equivalent CIGS solar cells containing chemically deposited CdS thin film as a window layer.

Original language	English
Pages (from-to)	5297-5301
Number of pages	5
Journal	Crystal Growth and Design
Volume	10
Issue number	12
DOIs	https://doi.org/10.1021/cg101157a
Publication status	Published - 2010 Dec 1

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/cg101157a

Cite this

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title = "Electrodeposition of Cu(In,Ga)Se2 crystals on high-density CdS nanowire arrays for photovoltaic applications",

abstract = "High-density and single-crystalline CdS nanowires were grown on fluorine-doped tin oxide (FTO)/soda-lime glass substrates using Bi catalysts via the so-called solution-liquid-solid (SLS) mechanism. Through a series of voltage loading steps, high-quality Cu(In,Ga)Se2 (CIGS) light absorption layers were electrochemically deposited on the CdS window layers and subsequently selenized at 400 °C to form photovoltaic cells. Due to the one dimensionality and single crystallinity of the CdS nanowires, the carrier collection efficiency could be improved. The resulting CIGS/CdS nanowire solar cells showed a light energy conversion efficiency of{\~ }6.18% under AM 1.5 conditions (I = 100 mW/cm2), which is{\~ }28.7% higher than that of the equivalent CIGS solar cells containing chemically deposited CdS thin film as a window layer.",

author = "Kwak, {Woo Chul} and Han, {Sung Hwan} and Kim, {Tae Geun} and Sung, {Yun Mo}",

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T1 - Electrodeposition of Cu(In,Ga)Se2 crystals on high-density CdS nanowire arrays for photovoltaic applications

AU - Kwak, Woo Chul

AU - Han, Sung Hwan

AU - Kim, Tae Geun

AU - Sung, Yun Mo

PY - 2010/12/1

Y1 - 2010/12/1

N2 - High-density and single-crystalline CdS nanowires were grown on fluorine-doped tin oxide (FTO)/soda-lime glass substrates using Bi catalysts via the so-called solution-liquid-solid (SLS) mechanism. Through a series of voltage loading steps, high-quality Cu(In,Ga)Se2 (CIGS) light absorption layers were electrochemically deposited on the CdS window layers and subsequently selenized at 400 °C to form photovoltaic cells. Due to the one dimensionality and single crystallinity of the CdS nanowires, the carrier collection efficiency could be improved. The resulting CIGS/CdS nanowire solar cells showed a light energy conversion efficiency of ̃6.18% under AM 1.5 conditions (I = 100 mW/cm2), which is ̃28.7% higher than that of the equivalent CIGS solar cells containing chemically deposited CdS thin film as a window layer.

AB - High-density and single-crystalline CdS nanowires were grown on fluorine-doped tin oxide (FTO)/soda-lime glass substrates using Bi catalysts via the so-called solution-liquid-solid (SLS) mechanism. Through a series of voltage loading steps, high-quality Cu(In,Ga)Se2 (CIGS) light absorption layers were electrochemically deposited on the CdS window layers and subsequently selenized at 400 °C to form photovoltaic cells. Due to the one dimensionality and single crystallinity of the CdS nanowires, the carrier collection efficiency could be improved. The resulting CIGS/CdS nanowire solar cells showed a light energy conversion efficiency of ̃6.18% under AM 1.5 conditions (I = 100 mW/cm2), which is ̃28.7% higher than that of the equivalent CIGS solar cells containing chemically deposited CdS thin film as a window layer.

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