Electroluminescence from ZnO nanoflowers/GaN thin film p-n heterojunction

Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

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12 Citations (Scopus)


Dielectrophoretic force was employed to position ZnO nanoflowers on a p-type GaN thin film prepatterned with Ti/Al/Ni/Au n-type and Ni/Au p-type contact metallizations. Analytical and finite element calculations were employed to determine the optimal alternating current frequency to attract the randomly dispersed ZnO nanoflowers to the n-type contact located on but isolated from the p-GaN thin film. The n-type ZnO nanoflower/p-type GaN thin film heterojunction displayed rectifying current-voltage behavior characteristic of a pristine p-n junction diode and emitted violet light under forward bias above 4.7-5.5 V.

Original languageEnglish
Article number082111
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2010 Aug 23

Bibliographical note

Funding Information:
The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea. The research at U.S. Naval Research Laboratory was supported by Office of the Naval Research.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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