Abstract
Heterojunction bipolar transistor (HBT) design methodology was hypothesized exploring the temperature of the metal system, relating the limits imposed by the metal system to the device operation conditions. The operating current limit of high speed SiGe bipolar transistors due to electromigration was obtained as a function of bias voltage with device self-heating. This technology was selected to demonstrate the necessity of this hypothesis to high speed communication circuit designs.
Original language | English |
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Pages | 78-82 |
Number of pages | 5 |
Publication status | Published - 2001 |
Externally published | Yes |
Event | 2001 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, United States Duration: 2001 Oct 15 → 2001 Oct 18 |
Other
Other | 2001 IEEE International Integrated Reliability Workshop Final Report |
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Country/Territory | United States |
City | Lake Tahoe, CA |
Period | 01/10/15 → 01/10/18 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering