Electron field emission from semiconducting nanowires

S. M. Pimenov, V. D. Frolov, A. V. Kudryashov, M. M. Lamanov, N. P. Abanshin, B. I. Gorfinkel, D. W. Kim, Y. J. Choi, J. H. Park, J. G. Park

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


In this paper we report on investigations of field emission (FE) properties of semiconducting (SiC, ZnO) one-dimensional (1D) nanostructures - nanowire/nanorod arrays, and fabrication of low-voltage field emission display (FED) devices based on these 1D nanomaterials. SiC nanowires were grown on Ni-coated Si substrates using a thermal metal-organic chemical vapor deposition (MOCVD) technique, and ZnO nanostructures were grown on gold-coated Si substrates by a thermal CVD method. Electron field emission properties of SiC and ZnO nanostructures were examined in plane geometry using a flat phosphor screen. The interrelation between the FE characteristics (emission thresholds, current density, surface uniformity, etc.) and microstructure and surface morphology of the produced 1D nanostructures was established. Diode-type FED devices (flat vacuum lamps) with SiC-nanowire-based cathodes were developed and fabricated. The FEDs are characterized by low threshold and operating electric fields - lower 2 V/μm and 5 V/μm, respectively, high current density and brightness, and stable performance of the nanowire-based cathodes.

Original languageEnglish
Pages (from-to)758-763
Number of pages6
JournalDiamond and Related Materials
Issue number4-5
Publication statusPublished - 2008 Apr
Externally publishedYes


  • Electron field emission
  • FED
  • Semiconducting nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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