Electron irradiation effects in GaNInGaN Multiple quantum well structures

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; In Hwan Lee; Jong Hyeob Baek; N. G. Kolin; V. M. Boiko; D. I. Merkurisov; S. J. Pearton

doi:10.1149/1.2803517

Electron irradiation effects in GaNInGaN Multiple quantum well structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, In Hwan Lee, Jong Hyeob Baek, N. G. Kolin, V. M. Boiko, D. I. Merkurisov, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

Original language	English
Pages (from-to)	H31-H35
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	1
DOIs	https://doi.org/10.1149/1.2803517
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2803517

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title = "Electron irradiation effects in GaNInGaN Multiple quantum well structures",

abstract = "Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Lee, {In Hwan} and Baek, {Jong Hyeob} and Kolin, {N. G.} and Boiko, {V. M.} and Merkurisov, {D. I.} and Pearton, {S. J.}",

year = "2008",

doi = "10.1149/1.2803517",

language = "English",

volume = "155",

pages = "H31--H35",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - Electron irradiation effects in GaNInGaN Multiple quantum well structures

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Lee, In Hwan

AU - Baek, Jong Hyeob

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Merkurisov, D. I.

AU - Pearton, S. J.

PY - 2008

Y1 - 2008

N2 - Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

AB - Capacitance-voltage profiles, admittance spectra, deep-level spectra, current-voltage characteristics, and microcathodoluminescence (MCL) spectra were measured before and after electron irradiation of n-GaNInGaN multi-quantum-well (MQW) structures typical of the active region of GaNInGaN blue light emitting diodes. Electron irradiation produces strong compensation of the conductivity in the MQW and introduces interface traps with ionization energies of 100 and 190 meV, in addition to a broad band of interface traps closer to the middle of the bandgap, acceptor traps near Ec -1.1 eV and hole traps near Ev +0.9 eV in the GaN barriers and at the GaNInGaN interfaces in the QWs. The dose of electrons at which measurable changes occur in the MCL spectra is 1015 cm-2, while measurable changes in the electrical properties are observed after doses exceeding 1016 cm-2 electrons.

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SP - H31-H35

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Electron irradiation effects in GaNInGaN Multiple quantum well structures

Abstract

ASJC Scopus subject areas

UN SDGs

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