Electron irradiation of near-UV GaN/InGaN light emitting diodes

In Hwan Lee; Alexander Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; N. M. Shmidt; N. A. Tal'nishnih; E. I. Shabunina; Han Su Cho; Sung Min Hwang; R. A. Zinovyev; S. I. Didenko; P. B. Lagov; S. J. Pearton

doi:10.1002/pssa.201700372

Electron irradiation of near-UV GaN/InGaN light emitting diodes

In Hwan Lee, Alexander Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, N. M. Shmidt, N. A. Tal'nishnih, E. I. Shabunina, Han Su Cho, Sung Min Hwang, R. A. Zinovyev, S. I. Didenko, P. B. Lagov, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E_c−0.8 and E_c−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 10¹⁶ cm⁻². The likely origin of the EL efficiency decrease is this increase in concentration of the E_c −0.8 eV and E_c −1 eV traps.

Original language	English
Article number	1700372
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	214
Issue number	10
DOIs	https://doi.org/10.1002/pssa.201700372
Publication status	Published - 2017 Oct

Keywords

GaN
LED
defects
electroluminescence
electron irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry
Electrical and Electronic Engineering

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10.1002/pssa.201700372

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Lee, I. H., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Shmidt, N. M., Tal'nishnih, N. A., Shabunina, E. I., Cho, H. S., Hwang, S. M., Zinovyev, R. A., Didenko, S. I., Lagov, P. B., & Pearton, S. J. (2017). Electron irradiation of near-UV GaN/InGaN light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 214(10), Article 1700372. https://doi.org/10.1002/pssa.201700372

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title = "Electron irradiation of near-UV GaN/InGaN light emitting diodes",

abstract = "Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.",

keywords = "GaN, LED, defects, electroluminescence, electron irradiation",

author = "Lee, {In Hwan} and Polyakov, {Alexander Y.} and Smirnov, {N. B.} and Shchemerov, {I. V.} and Shmidt, {N. M.} and Tal'nishnih, {N. A.} and Shabunina, {E. I.} and Cho, {Han Su} and Hwang, {Sung Min} and Zinovyev, {R. A.} and Didenko, {S. I.} and Lagov, {P. B.} and Pearton, {S. J.}",

note = "Funding Information: Acknowledgements The work at NUST MISiS was supported by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055). The work at Korea University was supported by National Research Foundation of Korea Ministry of Science, ICT & Future Planning (2017R1A2B3006141). UF was supported by DTRA HDTRA1-17-1-0011. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = oct,

doi = "10.1002/pssa.201700372",

language = "English",

volume = "214",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Electron irradiation of near-UV GaN/InGaN light emitting diodes

AU - Lee, In Hwan

AU - Polyakov, Alexander Y.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Shmidt, N. M.

AU - Tal'nishnih, N. A.

AU - Shabunina, E. I.

AU - Cho, Han Su

AU - Hwang, Sung Min

AU - Zinovyev, R. A.

AU - Didenko, S. I.

AU - Lagov, P. B.

AU - Pearton, S. J.

N1 - Funding Information: Acknowledgements The work at NUST MISiS was supported by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055). The work at Korea University was supported by National Research Foundation of Korea Ministry of Science, ICT & Future Planning (2017R1A2B3006141). UF was supported by DTRA HDTRA1-17-1-0011. Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2017/10

Y1 - 2017/10

N2 - Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.

AB - Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.

KW - GaN

KW - LED

KW - defects

KW - electroluminescence

KW - electron irradiation

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U2 - 10.1002/pssa.201700372

DO - 10.1002/pssa.201700372

M3 - Article

AN - SCOPUS:85031003775

SN - 1862-6300

VL - 214

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

M1 - 1700372

ER -

Electron irradiation of near-UV GaN/InGaN light emitting diodes

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