Electron irradiation of near-UV GaN/InGaN light emitting diodes

In Hwan Lee, Alexander Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, N. M. Shmidt, N. A. Tal'nishnih, E. I. Shabunina, Han Su Cho, Sung Min Hwang, R. A. Zinovyev, S. I. Didenko, P. B. Lagov, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.

Original languageEnglish
Article number1700372
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number10
Publication statusPublished - 2017 Oct

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


  • GaN
  • LED
  • defects
  • electroluminescence
  • electron irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Surfaces and Interfaces


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