Abstract
We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.
| Original language | English |
|---|---|
| Pages (from-to) | 1123-1126 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 45 |
| Issue number | 4 |
| Publication status | Published - 2004 Oct |
Keywords
- Electron magnetic resonance
- Interface Mn clusters
- YMnOs/Si
ASJC Scopus subject areas
- Physics and Astronomy(all)