We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2004 Oct|
- Electron magnetic resonance
- Interface Mn clusters
ASJC Scopus subject areas
- Physics and Astronomy(all)