Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure

Chang Hoon Lee, Ai Ran Han, Joon Kim

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1 Citation (Scopus)


We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.

Original languageEnglish
Pages (from-to)1123-1126
Number of pages4
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2004 Oct


  • Electron magnetic resonance
  • Interface Mn clusters
  • YMnOs/Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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