Electron magnetic resonance study of a YMnO 3/Si ferroelectric gate structure

Chang Hoon Lee, Ai Ran Han, Joon Kim

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    1 Citation (Scopus)

    Abstract

    We have performed systematic X-band electron magnetic resonance(EMR) measurements for a YMnO 3/Si ferroelectric gate structure prepared by sputtering in an O 2/(Ar + O 2) atmosphere of 20%. The EMR, intensities observed at room temperature consist of two parts: one is a derivative type of Gaussian EMR line with a ΔH fwhm of 524 G at g ∼ 2, and the other is a sharp composite spectrum with a very complex structure which is modulated in the former Gaussian EMR, line. In particular, the EMR, temperature behavior of the broad Gaussian showed a motional narrowing with increasing temperature. These results suggest that the Mn clusters in the polycrystalline Y 2O 3 layer and/or the amorphous Si-enriched Y-Si interface layer are responsible for the EMR transitions observed.

    Original languageEnglish
    Pages (from-to)1123-1126
    Number of pages4
    JournalJournal of the Korean Physical Society
    Volume45
    Issue number4
    Publication statusPublished - 2004 Oct

    Keywords

    • Electron magnetic resonance
    • Interface Mn clusters
    • YMnOs/Si

    ASJC Scopus subject areas

    • General Physics and Astronomy

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