Abstract
Gamma-ray irradiation effects on the photoresponsive thin-film devices based on the regioregular poly(3-hexylthiophene) (RR-P3HT) conjugated polymer have been studied by means of atomic force microscopy, UV-vis absorption, photoluminescence (PL), and time-of-flight measurements. As a result, increased light absorption in the red region and PL quenching induced by the irradiation were observed. Besides, enhancement of the electron/hole mobilities, attributable to improved ordering or increased nanodomain size of the P3HT thin films, was revealed.
Original language | English |
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Pages (from-to) | 25-28 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 15 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2015 Feb |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (Proton Users Program Project No. 2014M2B2A4030835, 2014028954, and NRF-2010-0027963). The measurements at the Korean Basic Science Institute (KBSI) are acknowledged.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
Keywords
- Electron and hole mobility
- Gamma-ray irradiation effects
- Regioregular P3HT conjugated polymer
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy