Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

In Hwan Lee; Alexander Y. Polyakov; Nikolai B. Smirnov; Eugene B. Yakimov; Sergey A. Tarelkin; Andery V. Turutin; Ivan V. Shemerov; Stephen J. Pearton

doi:10.7567/APEX.9.061002

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

In Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Eugene B. Yakimov, Sergey A. Tarelkin, Andery V. Turutin, Ivan V. Shemerov, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electronbeam- induced current experiments. The results strongly indicate that deep electron traps near E_c - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

Original language	English
Article number	061002
Journal	Applied Physics Express
Volume	9
Issue number	6
DOIs	https://doi.org/10.7567/APEX.9.061002
Publication status	Published - 2016 Jun
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition",

abstract = "For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electronbeam- induced current experiments. The results strongly indicate that deep electron traps near Ec - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.",

author = "Lee, {In Hwan} and Polyakov, {Alexander Y.} and Smirnov, {Nikolai B.} and Yakimov, {Eugene B.} and Tarelkin, {Sergey A.} and Turutin, {Andery V.} and Shemerov, {Ivan V.} and Pearton, {Stephen J.}",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = jun,

doi = "10.7567/APEX.9.061002",

language = "English",

volume = "9",

journal = "Applied Physics Express",

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T1 - Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

AU - Lee, In Hwan

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Yakimov, Eugene B.

AU - Tarelkin, Sergey A.

AU - Turutin, Andery V.

AU - Shemerov, Ivan V.

AU - Pearton, Stephen J.

PY - 2016/6

Y1 - 2016/6

N2 - For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electronbeam- induced current experiments. The results strongly indicate that deep electron traps near Ec - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

AB - For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electronbeam- induced current experiments. The results strongly indicate that deep electron traps near Ec - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

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VL - 9

JO - Applied Physics Express

JF - Applied Physics Express

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ER -

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

Abstract

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