Electronic phase coherence and relaxation in graphene field effect transistor

Youngman Oh, Jonghwa Eom, Hyun Cheol Koo, Suk Hee Han

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (τφ), intervalley scattering time (τi), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of τφ shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, τφ increases rapidly as the density of carrier increases. However, τi shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of τφ.

Original languageEnglish
Pages (from-to)1987-1990
Number of pages4
JournalSolid State Communications
Issue number41-42
Publication statusPublished - 2010 Nov
Externally publishedYes


  • A. Graphene
  • D. Phase coherence
  • D. Weak localization
  • E. Magnetoresistance

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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