Electronic properties of light-emitting p-n hetero-junction array consisting of p+-Si and aligned n-ZnO nanowires

Min Young Bae, Kyung Whon Min, Jangyeol Yoon, Gyu Tae Kim, Jeong Sook Ha

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10 Citations (Scopus)

Abstract

Hetero-junction array of p+-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p+-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 104 at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 × 104 under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices.

Original languageEnglish
Article number084310
JournalJournal of Applied Physics
Volume113
Issue number8
DOIs
Publication statusPublished - 2013 Feb 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374), the IT R&D program of MKE/KEIT (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W), and KU-KIST School Program of Korea University, Korea.

ASJC Scopus subject areas

  • General Physics and Astronomy

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