Electronic properties of light-emitting p-n hetero-junction array consisting of p+-Si and aligned n-ZnO nanowires

Min Young Bae; Kyung Whon Min; Jangyeol Yoon; Gyu Tae Kim; Jeong Sook Ha

doi:10.1063/1.4792302

Electronic properties of light-emitting p-n hetero-junction array consisting of p⁺-Si and aligned n-ZnO nanowires

Min Young Bae, Kyung Whon Min, Jangyeol Yoon, Gyu Tae Kim, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Hetero-junction array of p⁺-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p⁺-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 10⁴ at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 × 10⁴ under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices.

Original language	English
Article number	084310
Journal	Journal of Applied Physics
Volume	113
Issue number	8
DOIs	https://doi.org/10.1063/1.4792302
Publication status	Published - 2013 Feb 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374), the IT R&D program of MKE/KEIT (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W), and KU-KIST School Program of Korea University, Korea.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4792302

Cite this

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title = "Electronic properties of light-emitting p-n hetero-junction array consisting of p+-Si and aligned n-ZnO nanowires",

abstract = "Hetero-junction array of p+-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p+-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 104 at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 × 104 under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices.",

author = "Bae, {Min Young} and Min, {Kyung Whon} and Jangyeol Yoon and Kim, {Gyu Tae} and Ha, {Jeong Sook}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374), the IT R&D program of MKE/KEIT (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W), and KU-KIST School Program of Korea University, Korea.",

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AU - Bae, Min Young

AU - Min, Kyung Whon

AU - Yoon, Jangyeol

AU - Kim, Gyu Tae

AU - Ha, Jeong Sook

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374), the IT R&D program of MKE/KEIT (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W), and KU-KIST School Program of Korea University, Korea.

PY - 2013/2/28

Y1 - 2013/2/28

N2 - Hetero-junction array of p+-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p+-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 104 at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 × 104 under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices.

AB - Hetero-junction array of p+-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p+-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 104 at ±3 V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 × 104 under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices.

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