Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3Transistors

Xinyi Xia, Minghan Xian, Jian Sian Li, Fan Ren, Jinho Bae, Jihyun Kim, Md Abu Jafar Rasel, Aman Haque, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The dc characteristics of quasi 2-dimensional Ga2O3 nanolayer field effect transistors were examined over the temperature range up to ~327°C. The (100) plane β-Ga2O3 flake was mechanically exfoliated from the side wall of (-201) plane β-Ga2O3 bulk substrate and transferred onto a SiO2/Si substrate. The excellent high temperature transistor performance and air stability of quasi-2D β-Ga2O3 makes these an appropriate candidate for high voltage nano electronics.

Original languageEnglish
Title of host publicationSoutheastCon 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781665406529
Publication statusPublished - 2022
EventSoutheastCon 2022 - Mobile, United States
Duration: 2022 Mar 262022 Apr 3

Publication series

NameConference Proceedings - IEEE SOUTHEASTCON
ISSN (Print)0734-7502


ConferenceSoutheastCon 2022
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2022 IEEE.


  • elevated temperature
  • exfoliation
  • field effect transistor
  • gallium oxide
  • wide bandgap semiconductor

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Software
  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Signal Processing


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