Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3Transistors

Xinyi Xia, Minghan Xian, Jian Sian Li, Fan Ren, Jinho Bae, Jihyun Kim, Md Abu Jafar Rasel, Aman Haque, Stephen J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dc characteristics of quasi 2-dimensional Ga2O3 nanolayer field effect transistors were examined over the temperature range up to ~327°C. The (100) plane β-Ga2O3 flake was mechanically exfoliated from the side wall of (-201) plane β-Ga2O3 bulk substrate and transferred onto a SiO2/Si substrate. The excellent high temperature transistor performance and air stability of quasi-2D β-Ga2O3 makes these an appropriate candidate for high voltage nano electronics.

Original languageEnglish
Title of host publicationSoutheastCon 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages190-194
Number of pages5
ISBN (Electronic)9781665406529
DOIs
Publication statusPublished - 2022
EventSoutheastCon 2022 - Mobile, United States
Duration: 2022 Mar 262022 Apr 3

Publication series

NameConference Proceedings - IEEE SOUTHEASTCON
Volume2022-March
ISSN (Print)0734-7502

Conference

ConferenceSoutheastCon 2022
Country/TerritoryUnited States
CityMobile
Period22/3/2622/4/3

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

  • elevated temperature
  • exfoliation
  • field effect transistor
  • gallium oxide
  • wide bandgap semiconductor

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Software
  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Signal Processing

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