Abstract
Stripe-shaped diamond-tip field emitter arrays were fabricated by using transfer mold technique. The tip radius of each diamond emitter was about 300 angstroms. The current density of 800 μA/cm2 was obtained from the current-voltage measurement of the diamond-tip field emitter arrays. The emission current was measured under the pressure of 1×10-4, 1×10-5, 1×10-6 Torr, respectively. No difference in emission characteristics of the field emitter arrays under different pressure condition was observed.
Original language | English |
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Pages | 526-529 |
Number of pages | 4 |
Publication status | Published - 1996 |
Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
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City | St.Petersburg, Russia |
Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces