Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Seongjin Kim; Byeong Kwon Ju; Yun Hi Lee; Beom Soo Park; Young Joon Baik; Sungkyoo Lim; Myung Hwan Oh

doi:10.1116/1.589608

Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Seongjin Kim, Byeong Kwon Ju, Yun Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm² and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

Original language	English
Pages (from-to)	499-502
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.589608
Publication status	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.",

author = "Seongjin Kim and Ju, {Byeong Kwon} and Lee, {Yun Hi} and Park, {Beom Soo} and Baik, {Young Joon} and Sungkyoo Lim and Oh, {Myung Hwan}",

year = "1997",

doi = "10.1116/1.589608",

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AU - Kim, Seongjin

AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Park, Beom Soo

AU - Baik, Young Joon

AU - Lim, Sungkyoo

AU - Oh, Myung Hwan

PY - 1997

Y1 - 1997

N2 - Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

AB - Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

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