Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Seongjin Kim; Byeong Kwon Ju; Yun Hi Lee; Beom Soo Park; Young Joon Baik; Sungkyoo Lim; Myung Hwan Oh

doi:10.1116/1.589608

Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Seongjin Kim, Byeong Kwon Ju, Yun Hi Lee, Beom Soo Park, Young Joon Baik, Sungkyoo Lim, Myung Hwan Oh

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm² and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

Original language	English
Pages (from-to)	499-502
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.589608
Publication status	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589608

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abstract = "Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.",

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AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Park, Beom Soo

AU - Baik, Young Joon

AU - Lim, Sungkyoo

AU - Oh, Myung Hwan

PY - 1997

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N2 - Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

AB - Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.

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Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

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