Abstract
Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 A. The maximum current density of 800 μA/cm2 and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film.
Original language | English |
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Pages (from-to) | 499-502 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 15 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1997 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering